Main Article Content
Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (1.965,1.9 , 1.82) eV at radiated by B ray with absorption doses of (0,34,69)Gy respectively.The Ea and AEt of Ge20Se80 films showed adecrease in E8 and an increase in AEt with radiation. This be-havior may be related to structural defects and dangling bonds.
Download data is not yet available.
How to Cite
Journal BS. The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor. . BSJ [Internet]. 6Jun.2004 [cited 28May2020];1(2):326-9. Available from: http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/568