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Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (1.965,1.9 , 1.82) eV at radiated by B ray with absorption doses of (0,34,69)Gy respectively.The Ea and AEt of Ge20Se80 films showed adecrease in E8 and an increase in AEt with radiation. This be-havior may be related to structural defects and dangling bonds.
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Journal BS. The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor. : N. K. Abbas| L.K.Abass| N.B.AI Rawi. Baghdad Sci.J [Internet]. 2004Jun.6 [cited 2020Nov.25];1(2):326-9. Available from: http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/568