Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor

Main Article Content

Ashwaq T. Dahham
Kadhim A. Aadim
Nada K. Abbas

Abstract

The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA.
From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature.

Article Details

How to Cite
1.
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor. Baghdad Sci.J [Internet]. 2018 Sep. 13 [cited 2024 Mar. 28];15(3):0292. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2475
Section
article

How to Cite

1.
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor. Baghdad Sci.J [Internet]. 2018 Sep. 13 [cited 2024 Mar. 28];15(3):0292. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2475

Similar Articles

You may also start an advanced similarity search for this article.