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Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide


  • Abid Mahboob Department of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan
  • Muhammad Waheed Rasheed Department of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan.
  • Jalal Hatem Hussein Bayati Department of Mathematics, College of Science for Women, University of Baghdad, Baghdad, Iraq.
  • Iqra Hanif Department of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan.
  • Sajid Mahboob Alam Department of Mathematics, Minhaj University Lahore, Pakistan.



Bi-distance edges, Molecular graph, Randic index, Silicon Carbide Si2C3-1[t, h], Topological index, Zagreb index.


          The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based topological indices are used to analyze the chemical structures of silicon carbides. To evaluate the features of various chemical or non-chemical networks, a variety of topological indices are defined. In this paper, a new concept related to the degree of the graph called "bi-distance" is introduced, which is used to calculate all the additive as well as multiplicative degree-based indices for the isomer of silicon carbide, Si2C3-1[t, h]. The term "bi-distance" is derived from the concepts of degree and distance in such a way that second distance can be used to calculate degree-based topological indices.


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