Preparation of superposed thin film (CdTe)1-xSex / ZnS and Studying the Effect of Concentration on Some its Electrical Properties.

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Hassan J. Abd
Arwa G. Nagee
Mohammad U. kadim
Hydar A. Kathum

Abstract

Preparation of superposed thin film (CdTe)1-xSex / ZnS) with concentration of (x= 0.1, 0.3, 0.5) at a temperature of substrate (Ts= 80 0C) by using Thermal Vacuum Evaporation System. The measurement of X-ray diffraction shows that the compounds CdTe, ZnS, (CdTe)1-xSex and (CdTe)1-xSex / ZnS have a polycrystalline structure, the C-V characteristic shows that the capacitance degrease by increasing the concentration (x) in reverse bias, while the I-V characteristic shows the current dark (Id) increase in forward and reverse bias by increasing (x) and the photocurrent (Iph) increase in reverse bias by increasing the concentration (x), the values of photocurrent are greater than from the values of the dark current for all concentrations.

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1.
Preparation of superposed thin film (CdTe)1-xSex / ZnS and Studying the Effect of Concentration on Some its Electrical Properties. Baghdad Sci.J [Internet]. 2014 Jun. 1 [cited 2024 Mar. 28];11(2):584-9. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2668
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How to Cite

1.
Preparation of superposed thin film (CdTe)1-xSex / ZnS and Studying the Effect of Concentration on Some its Electrical Properties. Baghdad Sci.J [Internet]. 2014 Jun. 1 [cited 2024 Mar. 28];11(2):584-9. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2668