Abstract
In this research, the a-As films have been prepared by thermal evaporation with thickness 250 nm and rate of deposition rd(1.04 nm/sec) as function to annealing temperature (373 and 373K). From XRD analysis we can see that the degree of crystallinity increases with Ta, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also, we found that the quality factor and saturation current depend on annealing temperatures.
Keywords
Amorphous Arsenic, Heterojunction and Annealing temperature
Article Type
Article
How to Cite this Article
Al Haidery, Jenan H.; Ansari, Ramaz A. Al; Al-Lamy, Hussien K.; and Mohammed, Hanaa I.
(2014)
"'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions,"
Baghdad Science Journal: Vol. 11:
Iss.
2, Article 54.
DOI: https://doi.org/10.21123/bsj.2014.11.2.621-624
