Abstract
Thin filmsof (Cu2S)100-x( SnS2 )xat X=[ 30,40, &50)]% with thickness(0.9±0.03)μm , had been prepared by chemical spray pyrolysismethod on glass substrates at 373K. These films were then annealed under low pressureof(10-2) mbar,373)423&473)K for one hour . This research includes , studying the the optical properties of(Cu2S)100-x-(SnS2)xat X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 -1100) nm in order to study the optical properties .It was found that these films had direct optical band gap which decreases with the increasing SnS2ratio , while it increasing with the increase in the annealing temperature at all ratio
Keywords
Cu2S films, SnS2 films, structure properties, optical properties
Article Type
Article
How to Cite this Article
Abbas, Nada Khdair; Baker, Anwar Ali; and Ghdeeb, Nadia Jasim
(2014)
"The Effect of annealing temperature on the optical properties of (Cu2S)100-x( SnS2 )x thin films,"
Baghdad Science Journal: Vol. 11:
Iss.
2, Article 57.
DOI: https://doi.org/10.21123/bsj.2014.11.2.641-651
