Abstract
CdSfilms were prepared by thermal evaporation technique at thickness 1 μm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.
Keywords
Thermal diffusion, electrical properties, activation energy, concentration, mobility.
Article Type
Article
How to Cite this Article
al-Taay, Hana’a F.
(2017)
"Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation,"
Baghdad Science Journal: Vol. 14:
Iss.
4, Article 17.
DOI: https://doi.org/10.21123/bsj.2017.14.4.0793
