Abstract
The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA. From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature.
Keywords
AFM, Gas Sensor, Metal Oxide Semiconductor, Porous Silicon
Article Type
Article
How to Cite this Article
Dahham, Ashwaq T.; Aadim, Kadhim A.; and Abbas, Nada K.
(2018)
"Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor,"
Baghdad Science Journal: Vol. 15:
Iss.
3, Article 8.
DOI: https://doi.org/10.21123/bsj.2018.15.3.0292
