Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide

Authors

Abid Mahboob, Department of Mathematics, Division of Science and Technology, University of Education, Lahore PakistanFollow
Muhammad Waheed Rasheed, Department of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan.Follow
Jalal Hatem Hussein Bayati, Department of Mathematics, College of Science for Women, University of Baghdad, Baghdad, Iraq.Follow
Iqra Hanif, Department of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan.Follow
Sajid Mahboob Alam, Department of Mathematics, Minhaj University Lahore, Pakistan.Follow

Abstract

The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based topological indices are used to analyze the chemical structures of silicon carbides. To evaluate the features of various chemical or non-chemical networks, a variety of topological indices are defined. In this paper, a new concept related to the degree of the graph called "bi-distance" is introduced, which is used to calculate all the additive as well as multiplicative degree-based indices for the isomer of silicon carbide, Si2C3-1[t, h]. The term "bi-distance" is derived from the concepts of degree and distance in such a way that second distance can be used to calculate degree-based topological indices.

Keywords

Bi-distance edges, Molecular graph, Randic index, Silicon Carbide Si2C3-1[t, h], Topological index, Zagreb index.

Article Type

Article

How to Cite this Article

Mahboob, Abid; Rasheed, Muhammad Waheed; Bayati, Jalal Hatem Hussein; Hanif, Iqra; and Alam, Sajid Mahboob (2024) "Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide," Baghdad Science Journal: Vol. 21: Iss. 1, Article 24.
DOI: https://doi.org/10.21123/bsj.2023.8178