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Abstract

Vertical cavity surface emission lasers (VCSELs) are considered to be an integral component of short-range optical communication. Compact structure, low threshold current, and high modulation capability are the reasons why these communication systems are used. efficiency. This study presents a two-dimensional numerical simulation of a VCSEL structure at a wavelength of 850 nm using the finite element method (FEM) via Laser MOD software to investigate the effect of using two different quantum well materials (QW) GaAs, and AlGaAs on the optical performance of the device. All of the above were done within the same cavity and DBR structure to provide a consistent comparison. The results indicate that the optical gain of GaAs is higher, around 400 cm-1, than AlGaAs which has a lower optical gain of around 350 cm-1. GaAs also operates at a lower threshold current of approximately 0.45 mA, compared to AlGaAs, which operates at a threshold current of 0.67 mA. Thermal analysis shows that the self-heating effect begins at a lower temperature in the AlGaAs structure, around 350 K, compared to GaAs, which can operate stably up to approximately 375 K due to its high thermal conductivity. In general, the comparison illustrates the balance between performance, gain, and optical confinement of the two materials under the same structural and thermal conditions.

Keywords

Distributed bragg reflector (DBR), Finite element method (FEM), Near field intensity, Optical mode power, Quantum well

Subject Area

Physics

Article Type

Article

First Page

2117

Last Page

2127

Creative Commons License

Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.

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