Abstract
The optical gap (Eopt) and tailing(AE) for Se:2%As thin films prepared by vacuum evaporation as a function of annealing temperature are studied in the photon energy range (1.0 to 5.4) eV. Thin film of Se:2%As was found to be indirect gap with energy gap of (1.978, 2.082, 2.120, 2.230) eV at annealing temperature (295,370, 445, 520)K respectively. The Eopt and AE of Se:2%As films as a function of annealing temperature showed an increase in Eopt and a decrease in AE with the temperature. This behavior may be related to structural defects and dangling bands. The absorption coefficient for Se:2%As films exhibits exponential dependence on photon energy obeying Urbach's rule in the absorption edge.
Article Type
Article
How to Cite this Article
Mohammed, G. H.
(2006)
"Study the effects of annealing temperature on some optical properties of Se:2% As thin films,"
Baghdad Science Journal: Vol. 3:
Iss.
2, Article 25.
DOI: https://doi.org/10.21123/bsj.2006.11901
