Abstract
Polycrystalline PbxS1.x photoconductive detectors with both value of x(0.50&0.53) were fabricated using vacuum evaporation technique at room temperature and under vacuum 10 mbar. The thickness of films was 2.0 µm. The structure of the films has been examined by x-ray diffraction The detection properties': [responsivity (Ra), quantum efficiency(n), signal-to-noise ratio (S/N) ,detectivity (D') and noise equivalent power (NEP)] have been measured for both value of x .It was found that the responsivity, n, Dand S/N have increased while NEP decreased when the value of 0.53.
Article Type
Article
How to Cite this Article
Adam, K A
(2006)
"The Photoconductive Properties of PbS1x Films,"
Baghdad Science Journal: Vol. 3:
Iss.
3, Article 24.
DOI: https://doi.org/10.21123/bsj.2006.736
