Abstract
Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.
Article Type
Article
How to Cite this Article
Ali, Sabah M.; Alwan, Alwan M.; and Abass, Oday A.
(2007)
"Influence of Laser Irradiation Times on Properties of Porous Silicon,"
Baghdad Science Journal: Vol. 4:
Iss.
4, Article 17.
DOI: https://doi.org/10.21123/bsj.2007.4.4.640-646
