Abstract
In this work, heterojunction have been fabricated utilizing gallium arsenide (Bulk-n-GaAs) and (Epitaxy-n-GaAs) wavers as substrate, an amorphous germanium(Ge)was evaporated as thin film on the substrate, using thermal evaporation technique, lastly, electrical characteristics have been studied. All samples were annealed at temperature 637K for 30 minutes.Optical properties have been studied for Ge/Bulk n-GaAs contact and Ge/Epitaxy-n-GaAs contact, photocurrent as a function of the incident wavelength was measured to calculate the detector parameters. It was shown that the Spectral Responsivity Ge/Bulk n-GaAs was (0.2A/W) at (700nm), (0.191A/W) at (1300nm) and for Ge/Epitaxy-n-GaAs (0.148A/W) at (700nm), (0.145A/W) at (1300nm).
Article Type
Article
How to Cite this Article
Hassan, Hussein Abbas; Abbas, Ehsan M.; and Ferhan, Ali S.
(2011)
"Study of optical properties for Ge - GaAs Heterojunction,"
Baghdad Science Journal: Vol. 8:
Iss.
2, Article 6.
DOI: https://doi.org/10.21123/bsj.2011.8.2.456-464
