Growth Techniques and Some Physical Properties of InSb Single Crystal
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Abstract
Near intrinsic single crystal of InSb compound has been grown from the pure melting by annealing of two-zone furnuse technique and its some physical properties are characterized at room temperature. X-ray diffraction (XRD) observations show that the crystallographic direction is well oriented within (220) plane, while it is indicated that there is a poly crystalline structure for InSb thin films. The absorbance spectra at the fundamental absorption edge has been measured .The values of optical energy gap of single crystal specimens and deposited InSb films were calculated of 0.16 eV and 0.17 eV respectively at room temperature.
The aim in this paper is to study and compare the growth of single crystal and thin film to InSb.
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Udayashankar N. K., and Bhat H. L., 2001, "Growth and characterization of indium antimonide and gallium antimonide crystals", Bull. Mater. Sci., 7(a):744-752.
Morten, F.D., and King, R.E., 1965, "Growth and Transport Properties of Bi-Sb Single Crystal Alloys", Appl. Optics, 4(6):659-668.
Heremans, J., Portin, D. and Thrush, L. 1993, " Growth of InSb and InAs Thin Film properties ", C.M., Semicond. Sci. Technol., 40:542-549.
Hyun D. P., Prokesa S.M., Twigga M.E., Yong D., and Wang Z. L., 2007, (Growth of high quality, epitaxial InSb nanowires) Journal of Crystal Growth 304:399–401
Senthilkumar V., Venkatachalam S., Viswanathan C., Gopal S., Narayandass Sa. K., Mangalaraj D., Wilson K. C., and Vijayakumar K. P., 2005, "Influence of substrate temperature on the properties of vacuum evaporated InSb films", Cryst. Res. Technol. 40(6):573–578.
Miyazaki, T. and Adachi, S., 1991, "Indium Antimonide (InSb) Focal Plane Array (FPA) Detection for Near-Infrared Imaging Microscopy", Appl. Phys.70:1672-1685.
Borowska1 A., Gutek J., Czajka R., Oszwaldowski M., and Richter A., 2005, (Early stages of low temperature epitaxial growth of InSb on GaAs) Cryst. Res. Technol. 40, No. 4/5, 523 – 526.
.Mangal R. K. and Vijay Y. K., 2007, (Study of annealing effects in In–Sb bilayer thin films) Bull. Mater. Sci., 30(2):117–121.
Liang, S., 1962, "Compound Semiconductors", Reinhold, New York, pp227.
A. Borowska1, J. Gutek, R. Czajka, M. Oszwaldowski, and A Richter, 2005, (Early stages of low temperature epitaxial growth of InSb on GaAs) Cryst. Res. Technol. 40(4/5):523 – 526.
Gadkari D. B., Shashidharan P., Lal K. B., and Arora B. M., 2001, (Influence of crystal–melt interface shape on self-seeding and single crystalline quality) Bull. Mater. Sci., 24(5):475–482.
Runyan, W.R., 1975, "Semiconductor Measurements and Instrumentation", McGraw-Hill, Texas series, London, pp.267.
.Senthilkumar, V., Venkatachalam, S. and Vis wanathan, C., 2005, "Influence of substrate temperature on the properties of vacuum evaporated InSb films", Cryst. Res. Technol., 40(6):565-573.
Chou, L.H. 1992, "Thin Solid Films" McGraw-Hill, London, pp. 215, 188.
Clark, A.H., 1980, "Polycrystalline and Amorphous Thin Films and Devises", Academic Press, New York, pp.542.