Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation

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Hana’a F. al-Taay

Abstract

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

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Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation. Baghdad Sci.J [Internet]. 2017 Dec. 3 [cited 2024 Mar. 19];14(4):0793. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2423
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How to Cite

1.
Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation. Baghdad Sci.J [Internet]. 2017 Dec. 3 [cited 2024 Mar. 19];14(4):0793. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2423

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