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In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.
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Journal BS. ’I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions : Jenan H. Al.Haidery|Ramaz A. Al.Ansari|Hussien K. Al.Lamy|Hanaa I. Mohammed. Baghdad Sci.J [Internet]. 2014Jun.1 [cited 2021Aug.4];11(2):621-4. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2673