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Copper oxide thin films were deposited on glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The thickness of the thin films was around 0.43?m.Copper oxide thin films were annealed in air at (200, 300 and 400°C for 45min.The film structure properties were characterized by x-ray diffraction (XRD). XRD patterns indicated the presence of polycrystalline CuO. The average grain size is calculated from the X-rays pattern, it is found that the grain size increased with increasing annealing temperature. Optical transmitter microscope (OTM) and atomic force microscope (AFM) was also used. Direct band gap values of 2.2 eV for an annealed sample and (2, 1.5, 1.4) eV at 200, 300,400oC respectively.
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Journal BS. The Effect of Annealing on The Structural and Optical Properties of Copper Oxide Thin Films Prepared by SILAR Method: Hayder M. Ajeel|Shatha S. Batros Jam|Ashwaq A. Jabor|Elham H. Nassir. Baghdad Sci.J [Internet]. 2014Jun.1 [cited 2021Aug.4];11(2):718-29. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2685