Computation of Several Banhatti and Reven Invariants of Silicon Carbides

Main Article Content

Abid Mahboob
https://orcid.org/0000-0002-8784-6206
Muhammad Waheed Rasheed
https://orcid.org/0000-0002-8784-6206
Jalal Hatem Hussein Bayati
https://orcid.org/0000-0002-3070-2391
Iqra Hanif

Abstract

Expressions for the molecular topological features of silicon carbide compounds are essential for quantitative structure-property and structure-activity interactions. Chemical Graph Theory is a subfield of computational chemistry that investigates topological indices of molecular networks that correlate well with the chemical characteristics of chemical compounds. In the modern age, topological indices are extremely important in the study of graph theory. Topological indices are critical tools for understanding the core topology of chemical structures while examining chemical substances. In this article, compute the first and second k-Banhatti index, modified first and second k-Banhatti index, first and second k-hyper Banhatti index, first and second hyper Revan indices, first Revan vertex index, and third Revan index for Silicon Carbide SiC4-II [p, q] for all values of p and q

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1.
Computation of Several Banhatti and Reven Invariants of Silicon Carbides. Baghdad Sci.J [Internet]. 2023 Jun. 20 [cited 2024 Dec. 19];20(3(Suppl.):1099. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8212
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article

How to Cite

1.
Computation of Several Banhatti and Reven Invariants of Silicon Carbides. Baghdad Sci.J [Internet]. 2023 Jun. 20 [cited 2024 Dec. 19];20(3(Suppl.):1099. Available from: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8212

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