The role of annealing temperature on the optical energy gap and Urbach energy of Se:2%Sb thin films
محتوى المقالة الرئيسي
الملخص
The optical energy gap(Eopt) and the width of the tails of localized states in the band gap (?E) for Se:2%Sb thin films prepared by thermal co-evaporation method as a function of annealing temperature are studied in the photon energy range ( 1 to 5.4)eV.Se2%Sb film was found to be indirect transition with energy gap of (1.973,2.077, 2.096, 2.17) eV at annealing temperature (295,370,445,520)K respectively.
The Eopt and ?E of Se:2%Sb films as a function of annealing temperature showed an increase in Eopt and a decrease in ?E with increasing the annealing temperature. This behavior may be related to structural defects and dangling bonds.
The Eopt and ?E of Se:2%Sb films as a function of annealing temperature showed an increase in Eopt and a decrease in ?E with increasing the annealing temperature. This behavior may be related to structural defects and dangling bonds.
تفاصيل المقالة
كيفية الاقتباس
1.
The role of annealing temperature on the optical energy gap and Urbach energy of Se:2%Sb thin films . Baghdad Sci.J [انترنت]. 1 يونيو، 2008 [وثق 24 ديسمبر، 2024];5(2):249-52. موجود في: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/894
القسم
article
كيفية الاقتباس
1.
The role of annealing temperature on the optical energy gap and Urbach energy of Se:2%Sb thin films . Baghdad Sci.J [انترنت]. 1 يونيو، 2008 [وثق 24 ديسمبر، 2024];5(2):249-52. موجود في: https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/894