Structural and Optical Properties of CdS:20%In Films Prepared by Thermal Co-Evaporation method
Main Article Content
Abstract
The CdS;In films of Thickness 7500Ao at( 20% In) concentration have been Prepared by double evaporation method in Vacuum on glass substrate at 100co .
Optical and structural Properties have been studied. It has been found that all the films are Polycrystalline with high peak. The Doping the film lead to increase in absorption coefficient, extinction coefficient and imaginary dielectric constant and decreasing the energy of band gap, reflectance, reflective index and real dielectric constant.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
How to Cite
References
Lokhande ,C.D . and Pawar. S.H. 1982." optical and transport properties of chemical Bath deposited CdS:Al films",Solid State communications. 44 (8): 1137-1139.
Salwan, K.Al-Ani, Ismail,A. W. 2005."characterization of CdS:In/Si Hetero Junction solar cells" ,Iraqi Jof APPl Phys. 1( 2) : 13-17.
Ugwu,E.I. and Onah, D.U. 2007. "OpticalCharacteristicsof Chemical Bath Deposited CdS Thin Film Characteristics with in UV, Visible, and NIR Radiation", The Pacific Journal of Science and Technology. 8(1):155-161.
Ani, S.K.J.Al., Ismail, R.A. and Al-Taay. H.F. 2006."optoelectronic properties n:ICdS;In/p-si heterojunction Photo detecto', J. Mater sci. Mater Electron.17:819-824.
CRC Hand book of chemistry and physics Inc1979.59th edition, CRC, press.
Hogarth, C.A. and wright, L.A. 1968. "proceeding of Internationl conference of physics of Semiconductors", Moscow.pp 213.
Smith R.A.1990. "Semiconductors" , Cambridge,University Press 2nd ed. 1987.
Kenneth A. Jones. 1987. "Introduction to optical electronics", John Wiley and Sones, New York. pp 152-181.
Alias, M.F. 1998. "Optoelectronicstudy of a Se-Ge-Al a-Si-Ge-Al(As)". H Films, Ph.D. Thesis, University of Baghdad, Department of physics.
Ray, S. and Banerjee. R.1980. "Properties of Vacuum-Evaporated CdS Thin Films", Jap.J.APPl. Physics. 19(10): 1889-1895.
Kolhe ,S.and Takwale. M.G.1986. "Solar Energy Materials".13: 203-211.
Ramaigh ,K.S. and Sharon. R.M. 1998.J of Materials Science –Materials in Electronics. 9(4).
Ates,A., Yildirim, M. kundakci, M.A.and Yildrim. M. 2007. ".Invetstigation of Optical and Structural Properties of CdS Thin Films", Chinese J.Phys. 45(2-1):135-141.
Cook, R.K. and Christy. R. W. 1980."Optical Properties of Polycrystalline films",J. APPl. Phys. 51(1):160-165.
Mathur ,P.C., Sethi, B.R., and Sharma.O.P.1981."Electrontransporton n-type CdS single crystals annealed in Cd or In" .J.APPl.Phys. 52( 12): 7237.
المحضرة CdS و CdS: In صليوة. 1990. "دراسة الخواص الكهربائية والضوئية لاغشية غسان بطريقة الرش الكيميائي الحراري " رسالة مقدمة الى كلية العلوم / جامعة البصرة
Abss ,A.K. and AL-Eithan. F.Y.M. 1986. "photocurrent spectroscopy of solution –growth CdS films annealed in CdCL2 vapor"J.phys.Chem.Solids. 47( 10): 933.
Davila-Pintle, J.A. and Zelaya-Angel.O. 2006. "Electro-Optical Characterization of In-Situ Indium Doped CdS Thin Films by Chemical.
-CdS . ." تأثير التشعيع على الخواص البصرية لاغشبة .1998." جاكين هاري نجوان المحضرة بطريقة الرش الكيميائي الحراري "رسالة ماجستير الجامعة المستنصرية
Abdul Ghafor,W.A.S., Ali, S.A. and Flefil. S.S.1990. "In Fluence of Cu-Doped on some Optical properties of Sprayed CdS Thin Films" .J.Bas. Res.16:129-143.